QS8K11TCR Rohm Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 244+ | 0.64 EUR |
| 254+ | 0.6 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.51 EUR |
| 2500+ | 0.48 EUR |
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Technische Details QS8K11TCR Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QS8K11TCR nach Preis ab 0.52 EUR bis 1.46 EUR
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QS8K11TCR | Hersteller : ROHM Semiconductor |
 MOSFET 4V Drive Nch+Nch Si MOSFET |
auf Bestellung 2951 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8K11TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 3.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 1358 Stücke: Lieferzeit 10-14 Tag (e) |
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| QS8K11TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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QS8K11TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 3.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
Produkt ist nicht verfügbar |
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| QS8K11TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |