QS8M31TR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N/P-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.46 EUR |
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Technische Details QS8M31TR Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V, Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QS8M31TR nach Preis ab 0.37 EUR bis 1.85 EUR
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QS8M31TR | Hersteller : Rohm Semiconductor |
Trans MOSFET N/P-CH 60V 3A/2A 8-Pin TSMT T/R |
auf Bestellung 1527 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8M31TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/-2A; Idm: 4÷6A; 1.5W Kind of package: reel; tape Mounting: SMD Type of transistor: N/P-MOSFET Case: TSMD8 Polarisation: unipolar Drain-source voltage: 60/-60V Pulsed drain current: 4...6A Drain current: 3/-2A Gate charge: 4/7.2nC On-state resistance: 137/266mΩ Power dissipation: 1.5W Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 978 Stücke: Lieferzeit 7-14 Tag (e) |
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QS8M31TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/-2A; Idm: 4÷6A; 1.5W Kind of package: reel; tape Mounting: SMD Type of transistor: N/P-MOSFET Case: TSMD8 Polarisation: unipolar Drain-source voltage: 60/-60V Pulsed drain current: 4...6A Drain current: 3/-2A Gate charge: 4/7.2nC On-state resistance: 137/266mΩ Power dissipation: 1.5W Gate-source voltage: ±20V Kind of channel: enhancement |
auf Bestellung 978 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8M31TR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 60V 3A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 4997 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8M31TR | Hersteller : ROHM Semiconductor |
MOSFETs TSMT8 NPCH 60V 3A |
auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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