QS8M51FRATR ROHM SEMICONDUCTOR



Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/-1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details QS8M51FRATR ROHM SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 100/-100V, Drain current: 2/-1.5A, Pulsed drain current: 6A, Power dissipation: 1.5W, Case: TSMD8, Gate-source voltage: ±20V, On-state resistance: 355/540mΩ, Mounting: SMD, Gate charge: 4.7/17nC, Kind of package: reel; tape, Kind of channel: enhancement.