QS8M51TR Rohm Semiconductor
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 216+ | 0.72 EUR |
| 240+ | 0.63 EUR |
| 249+ | 0.58 EUR |
| 500+ | 0.54 EUR |
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Technische Details QS8M51TR Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V, Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QS8M51TR nach Preis ab 0.77 EUR bis 3.33 EUR
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QS8M51TR | Hersteller : Rohm Semiconductor |
 Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8M51TR | Hersteller : Rohm Semiconductor |
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R |
auf Bestellung 1361 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8M51TR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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QS8M51TR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 35296 Stücke: Lieferzeit 21-28 Tag (e) |
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QS8M51TR | Hersteller : ROHM Semiconductor |
MOSFET 4V Drive Nch + Pch MOSFET |
auf Bestellung 5105 Stücke: Lieferzeit 14-28 Tag (e) |
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| QS8M51TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| QS8M51TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |