QS8M51TR Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 203+ | 0.88 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
203 Stücke
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Technische Details QS8M51TR Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V, Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QS8M51TR nach Preis ab 0.88 EUR bis 3.89 EUR
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QS8M51TR | Rohm Semiconductor |
 Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8M51TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8M51TR | Rohm Semiconductor |
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8M51TR | ROHM Semiconductor |
MOSFETs 4V Drive Nch + Pch MOSFET |
auf Bestellung 4084 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8M51TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 8146 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8M51TR | Rohm Semiconductor |
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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QS8M51TR | Rohm Semiconductor |
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| QS8M51TR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 203+ | 0.88 EUR |
| QS8M51TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.08 EUR |
| QS8M51TR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 1.18 EUR |
| QS8M51TR |
|
Hersteller: ROHM Semiconductor
MOSFETs 4V Drive Nch + Pch MOSFET
MOSFETs 4V Drive Nch + Pch MOSFET
auf Bestellung 4084 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.81 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.2 EUR |
| 3000+ | 1.08 EUR |
| QS8M51TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 8146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.89 EUR |
| 10+ | 2.49 EUR |
| 50+ | 1.87 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.33 EUR |
| QS8M51TR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| QS8M51TR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R
Trans MOSFET N/P-CH Si 100V 2A/1.5A 8-Pin TSMT T/R
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)