Produkte > BEKING OPTOELECTRONICS > QX817N-FeH-DE
QX817N-FeH-DE

QX817N-FeH-DE Beking Optoelectronics

QX817X.pdf
Hersteller: Beking Optoelectronics
Description: Optoisolator Transistor 817
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 80% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 45 mA
Number of Channels: 1
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.093 EUR
4000+0.067 EUR
10000+0.045 EUR
20000+0.039 EUR
40000+0.036 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details QX817N-FeH-DE Beking Optoelectronics

Description: Optoisolator Transistor 817, Vce Saturation (Max): 200mV, Current Transfer Ratio (Min): 80% @ 5mA, Voltage - Isolation: 5000Vrms, Current - Output / Channel: 50mA, Input Type: DC, Voltage - Forward (Vf) (Typ): 1.25V, Operating Temperature: -55°C ~ 110°C, Mounting Type: Through Hole, Output Type: Transistor, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube, Current - DC Forward (If) (Max): 45 mA, Number of Channels: 1, Rise / Fall Time (Typ): 4µs, 3µs, Voltage - Output (Max): 80V, Supplier Device Package: 4-DIP, Current Transfer Ratio (Max): 600% @ 5mA.