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QX817N-FeH-ME

QX817N-FeH-ME Beking Optoelectronics

QX817X.pdf
Hersteller: Beking Optoelectronics
Description: Optoisolator Transistor 817
Supplier Device Package: 4-DIP-M
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Min): 80% @ 5mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Channels: 1
Rise / Fall Time (Typ): 4µs, 3µs
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.1 EUR
4000+0.069 EUR
10000+0.045 EUR
20000+0.039 EUR
40000+0.036 EUR
Mindestbestellmenge: 2000 Stücke
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Technische Details QX817N-FeH-ME Beking Optoelectronics

Description: Optoisolator Transistor 817, Supplier Device Package: 4-DIP-M, Current Transfer Ratio (Max): 600% @ 5mA, Vce Saturation (Max): 200mV, Current Transfer Ratio (Min): 80% @ 5mA, Voltage - Isolation: 5000Vrms, Input Type: DC, Operating Temperature: -55°C ~ 110°C, Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube, Number of Channels: 1, Rise / Fall Time (Typ): 4µs, 3µs.