Technische Details R1LP0408CSP5SI RENESAS
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 55ns; SO32; parallel, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory: 4Mb SRAM, Memory organisation: 512kx8bit, Operating voltage: 5V, Access time: 55ns, Case: SO32, Kind of interface: parallel, Mounting: SMD.
Weitere Produktangebote R1LP0408CSP5SI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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R1LP0408CSP-5SI | RENESAS |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 55ns; SO32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 5V Access time: 55ns Case: SO32 Kind of interface: parallel Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| R1LP0408CSP-5SI |
Hersteller: RENESAS
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH