Produkte > RENESAS ELECTRONICS CORPORATION > R1RW0416DSB-2LR#B0
R1RW0416DSB-2LR#B0

R1RW0416DSB-2LR#B0 Renesas Electronics Corporation

R1RW0416D_Series_Rev2.00_12-12-08.pdf
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 12 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 12ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
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Technische Details R1RW0416DSB-2LR#B0 Renesas Electronics Corporation

Description: IC SRAM 4MBIT PARALLEL 44TSOP II, DigiKey Programmable: Not Verified, Memory Organization: 256K x 16, Access Time: 12 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 12ns, Supplier Device Package: 44-TSOP II, Memory Format: SRAM, Technology: SRAM, Voltage - Supply: 3V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 4Mbit, Mounting Type: Surface Mount, Package / Case: 44-TSOP (0.400", 10.16mm Width), Packaging: Tray.