R4P020N06HZGT100 ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFETs R4P020N06HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for Switching
MOSFETs R4P020N06HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for Switching
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.73 EUR |
| 10+ | 1.07 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.47 EUR |
| 2000+ | 0.45 EUR |
| 5000+ | 0.4 EUR |
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Technische Details R4P020N06HZGT100 ROHM Semiconductor
Description: NCH 60V 2A, TO-243, POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-89, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote R4P020N06HZGT100
| Foto | Bezeichnung | Hersteller | Beschreibung |
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R4P020N06HZGT100 | Hersteller : Rohm Semiconductor |
Description: NCH 60V 2A, TO-243, POWER MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-89 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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R4P020N06HZGT100 | Hersteller : Rohm Semiconductor |
Description: NCH 60V 2A, TO-243, POWER MOSFET Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-89 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |