Technische Details R5011FNX Rohm Semiconductor
Description: MOSFET N-CH 500V 11A TO-220FM, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Weitere Produktangebote R5011FNX nach Preis ab 5.32 EUR bis 7.85 EUR
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R5011FNX | Rohm Semiconductor |
 Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220FM Bulk |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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R5011FNX | Rohm Semiconductor |
Description: MOSFET N-CH 500V 11A TO-220FM Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
auf Bestellung 418 Stücke: Lieferzeit 10-14 Tag (e) |
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| R5011FNX |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220FM Bulk
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220FM Bulk
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 5.75 EUR |
| R5011FNX |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A TO-220FM
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N-CH 500V 11A TO-220FM
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.85 EUR |
| 10+ | 6.58 EUR |
| 100+ | 5.32 EUR |