R6002END3TL1 Rohm Semiconductor
auf Bestellung 1548 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 271+ | 0.58 EUR |
| 295+ | 0.51 EUR |
| 304+ | 0.48 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.41 EUR |
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Technische Details R6002END3TL1 Rohm Semiconductor
Description: MOSFET N-CH 600V 1.7A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V.
Weitere Produktangebote R6002END3TL1 nach Preis ab 0.68 EUR bis 1.74 EUR
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R6002END3TL1 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 600V 1.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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R6002END3TL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 600V 1.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2436 Stücke: Lieferzeit 14-21 Tag (e) |
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R6002END3TL1 | Hersteller : ROHM Semiconductor |
MOSFET Nch 600V 2A TO-252 (DPAK) |
auf Bestellung 1062 Stücke: Lieferzeit 10-14 Tag (e) |
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R6002END3TL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 1.7A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
auf Bestellung 2318 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6002END3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.7A; Idm: 4A; 26W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.7A Pulsed drain current: 4A Power dissipation: 26W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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R6002END3TL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 1.7A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
Produkt ist nicht verfügbar |
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| R6002END3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.7A; Idm: 4A; 26W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.7A Pulsed drain current: 4A Power dissipation: 26W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |