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R6002ENHTB1

R6002ENHTB1 ROHM Semiconductor

datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET MOSFET
auf Bestellung 4840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.88 EUR
10+ 1.53 EUR
100+ 1.2 EUR
500+ 1.01 EUR
1000+ 0.86 EUR
2500+ 0.73 EUR
Mindestbestellmenge: 2
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Technische Details R6002ENHTB1 ROHM Semiconductor

Description: 600V 1.7A SOP8, LOW-NOISE POWER, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V.

Weitere Produktangebote R6002ENHTB1 nach Preis ab 0.83 EUR bis 1.9 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
R6002ENHTB1 R6002ENHTB1 Hersteller : Rohm Semiconductor datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.9 EUR
12+ 1.55 EUR
100+ 1.2 EUR
500+ 1.02 EUR
1000+ 0.83 EUR
Mindestbestellmenge: 10
R6002ENHTB1 Hersteller : Rohm Semiconductor r6002enhtb1-e.pdf Trans MOSFET N-CH 600V 1.7A 8-Pin SOP T/R
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
R6002ENHTB1 R6002ENHTB1 Hersteller : Rohm Semiconductor datasheet?p=R6002ENH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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