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R6003JND4TL1

R6003JND4TL1 Rohm Semiconductor

datasheet?p=R6003JND4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: Rohm Semiconductor
Description: 600V 1.3A SOT-223-3, PRESTOMOS W
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.15Ohm @ 1.5A, 15V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 7V @ 300µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
13+1.39 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.66 EUR
2000+0.60 EUR
Mindestbestellmenge: 10
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Technische Details R6003JND4TL1 Rohm Semiconductor

Description: 600V 1.3A SOT-223-3, PRESTOMOS W, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), Rds On (Max) @ Id, Vgs: 2.15Ohm @ 1.5A, 15V, Power Dissipation (Max): 7.8W (Tc), Vgs(th) (Max) @ Id: 7V @ 300µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V.

Weitere Produktangebote R6003JND4TL1 nach Preis ab 0.63 EUR bis 2.04 EUR

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R6003JND4TL1 R6003JND4TL1 Hersteller : ROHM Semiconductor datasheet?p=R6003JND4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key MOSFETs 600V 1.3A SOT-223-3, PrestoMOS with integrated high-speed diode: R6003JND4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS series, R60xxJNx series increases design flexibility while mainta
auf Bestellung 7458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.04 EUR
10+1.25 EUR
100+0.83 EUR
500+0.75 EUR
1000+0.68 EUR
2000+0.67 EUR
4000+0.63 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
R6003JND4TL1 R6003JND4TL1 Hersteller : Rohm Semiconductor datasheet?p=R6003JND4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 600V 1.3A SOT-223-3, PRESTOMOS W
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.15Ohm @ 1.5A, 15V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 7V @ 300µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
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