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R6003KND4TL1

R6003KND4TL1 ROHM Semiconductor

datasheet?p=R6003KND4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: ROHM Semiconductor
MOSFETs 600V 1.3A SOT-223-3, High-speed switching Power MOSFET: R6009KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.44 EUR
10+1.27 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.62 EUR
2000+0.56 EUR
4000+0.52 EUR
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Technische Details R6003KND4TL1 ROHM Semiconductor

Description: 600V 1.3A SOT-223-3, HIGH-SPEED, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V, Power Dissipation (Max): 7.8W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V.

Weitere Produktangebote R6003KND4TL1 nach Preis ab 0.71 EUR bis 1.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
R6003KND4TL1 R6003KND4TL1 Hersteller : Rohm Semiconductor datasheet?p=R6003KND4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 600V 1.3A SOT-223-3, HIGH-SPEED
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
auf Bestellung 3658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
14+1.33 EUR
100+1.08 EUR
500+0.84 EUR
1000+0.77 EUR
2000+0.71 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
R6003KND4TL1 R6003KND4TL1 Hersteller : Rohm Semiconductor datasheet?p=R6003KND4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 600V 1.3A SOT-223-3, HIGH-SPEED
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH