R6004END3TL1 Rohm Semiconductor

Description: MOSFET N-CH 600V 4A TO252, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 59W (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).