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R6004END4TL1

R6004END4TL1 Rohm Semiconductor

datasheet?p=R6004END4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: Rohm Semiconductor
Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 3869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
13+1.37 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 9
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Technische Details R6004END4TL1 Rohm Semiconductor

Description: 600V 2.4A SOT-223-3, LOW-NOISE P, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V, Power Dissipation (Max): 9.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.

Weitere Produktangebote R6004END4TL1 nach Preis ab 0.73 EUR bis 2.13 EUR

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R6004END4TL1 R6004END4TL1 Hersteller : ROHM Semiconductor datasheet?p=R6004END4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key MOSFETs 600V 2.4A SOT-223-3, Low-noise Power MOSFET: Power MOSFET R6004END4 is suitable for switching power supply.
auf Bestellung 7707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.13 EUR
10+1.37 EUR
100+0.94 EUR
500+0.84 EUR
1000+0.76 EUR
2000+0.75 EUR
4000+0.73 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
R6004END4TL1 Hersteller : Rohm Semiconductor r6004end4tl1-e.pdf Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) SOT-223 T/R
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+1.67 EUR
107+1.32 EUR
137+0.99 EUR
200+0.95 EUR
500+0.78 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
R6004END4TL1 R6004END4TL1 Hersteller : Rohm Semiconductor datasheet?p=R6004END4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH