R6004END4TL1 ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.93 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| 2000+ | 0.81 EUR |
| 4000+ | 0.75 EUR |
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Technische Details R6004END4TL1 ROHM Semiconductor
Description: 600V 2.4A SOT-223-3, LOW-NOISE P, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V, Power Dissipation (Max): 9.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.
Weitere Produktangebote R6004END4TL1 nach Preis ab 0.82 EUR bis 3 EUR
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R6004END4TL1 | Rohm Semiconductor |
 Description: 600V 2.4A SOT-223-3, LOW-NOISE PPackaging: Cut Tape (CT) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Power Dissipation (Max): 9.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
auf Bestellung 2396 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6004END4TL1 | Rohm Semiconductor |
Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) SOT-223 T/R |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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| R6004END4TL1 |
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Hersteller: Rohm Semiconductor
Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 2396 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 12+ | 1.89 EUR |
| 100+ | 1.26 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.9 EUR |
| 2000+ | 0.82 EUR |
| R6004END4TL1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) SOT-223 T/R
Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) SOT-223 T/R
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 1.99 EUR |
| 107+ | 1.61 EUR |
| 137+ | 1.23 EUR |
| 200+ | 1.19 EUR |
| 500+ | 1 EUR |