R6004JND3TL1 ROHM Semiconductor
auf Bestellung 2444 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.8 EUR |
| 10+ | 2.43 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.29 EUR |
| 2500+ | 1.19 EUR |
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Technische Details R6004JND3TL1 ROHM Semiconductor
Description: MOSFET N-CH 600V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 7V @ 450µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V.
Weitere Produktangebote R6004JND3TL1 nach Preis ab 1.39 EUR bis 2.92 EUR
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R6004JND3TL1 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 600V 4A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V |
auf Bestellung 2495 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6004JND3TL1 | Hersteller : ROHM SEMICONDUCTOR |
R6004JND3TL1 SMD N channel transistors |
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R6004JND3TL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V |
Produkt ist nicht verfügbar |