R6004JNJGTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.79 EUR |
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Technische Details R6004JNJGTL Rohm Semiconductor
Description: MOSFET N-CH 600V 4A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 7V @ 450µA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V.
Weitere Produktangebote R6004JNJGTL nach Preis ab 2.11 EUR bis 3.78 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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R6004JNJGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 4A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V |
auf Bestellung 1093 Stücke: Lieferzeit 10-14 Tag (e) |
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R6004JNJGTL | Hersteller : ROHM |
Description: ROHM - R6004JNJGTL - Leistungs-MOSFET, n-Kanal, 600 V, 4 A, 1.1 ohm, TO-263S, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V euEccn: NLR Verlustleistung: 60W Bauform - Transistor: TO-263S Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.1ohm |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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R6004JNJGTL | Hersteller : ROHM |
Description: ROHM - R6004JNJGTL - Leistungs-MOSFET, n-Kanal, 600 V, 4 A, 1.1 ohm, TO-263S, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V euEccn: NLR Verlustleistung: 60W Bauform - Transistor: TO-263S Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.1ohm |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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R6004JNJGTL | Hersteller : ROHM Semiconductor | MOSFET R6004JNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. |
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