R6006JND3TL1 Rohm Semiconductor
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 97+ | 1.62 EUR |
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Technische Details R6006JND3TL1 Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 7V @ 800µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V.
Weitere Produktangebote R6006JND3TL1 nach Preis ab 1.72 EUR bis 3.89 EUR
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R6006JND3TL1 | Hersteller : ROHM Semiconductor |
 MOSFET Nch 600V 6A Power MOSFET. R6006JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. |
auf Bestellung 948 Stücke: Lieferzeit 10-14 Tag (e) |
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R6006JND3TL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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R6006JND3TL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| R6006JND3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 86W Drain-source voltage: 600V Drain current: 6A On-state resistance: 936mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 18A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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R6006JND3TL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
Produkt ist nicht verfügbar |
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| R6006JND3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 86W Drain-source voltage: 600V Drain current: 6A On-state resistance: 936mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 18A |
Produkt ist nicht verfügbar |