Technische Details R6006KND3TL1 Rohm Semiconductor
Description: ROHM - R6006KND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.72 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600, Dauer-Drainstrom Id: 6, hazardous: false, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 70, Gate-Source-Schwellenspannung, max.: 5.5, euEccn: NLR, Verlustleistung: 70, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.72, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.72, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote R6006KND3TL1 nach Preis ab 1.99 EUR bis 5.32 EUR
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R6006KND3TL1 | Rohm Semiconductor |
 Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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R6006KND3TL1 | Rohm Semiconductor |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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R6006KND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A TO252 Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 2621 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6006KND3TL1 |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 3.38 EUR |
| 65+ | 2.62 EUR |
| R6006KND3TL1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 3.38 EUR |
| 65+ | 2.68 EUR |
| R6006KND3TL1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO252
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 600V 6A TO252
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 2621 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.32 EUR |
| 10+ | 3.45 EUR |
| 100+ | 2.38 EUR |
| 500+ | 1.99 EUR |