R6006KND3TL1 Rohm Semiconductor
auf Bestellung 2492 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 1.57 EUR |
| 105+ | 1.44 EUR |
| 250+ | 1.33 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.15 EUR |
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Technische Details R6006KND3TL1 Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote R6006KND3TL1 nach Preis ab 1.54 EUR bis 3.48 EUR
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R6006KND3TL1 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 600V 6A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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R6006KND3TL1 | Hersteller : ROHM Semiconductor |
MOSFET Nch 600V 6A Power MOSFET. R6006KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. |
auf Bestellung 2390 Stücke: Lieferzeit 10-14 Tag (e) |
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R6006KND3TL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 2663 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6006KND3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 70W Drain-source voltage: 600V Drain current: 6A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| R6006KND3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 70W Drain-source voltage: 600V Drain current: 6A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A |
Produkt ist nicht verfügbar |