R6006PND3FRATL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 42+ | 4.31 EUR |
| 56+ | 3.19 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
42 Stücke
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Technische Details R6006PND3FRATL Rohm Semiconductor
Description: 600V 6A TO-252, AUTOMOTIVE POWER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-252, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote R6006PND3FRATL nach Preis ab 1.95 EUR bis 5.97 EUR
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R6006PND3FRATL | Rohm Semiconductor |
 Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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R6006PND3FRATL | Rohm Semiconductor |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2390 Stücke: Lieferzeit 14-21 Tag (e) |
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R6006PND3FRATL | ROHM Semiconductor |
MOSFETs TO252 600V 6A N-CH MOSFET |
auf Bestellung 3765 Stücke: Lieferzeit 10-14 Tag (e) |
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R6006PND3FRATL | Rohm Semiconductor |
Description: 600V 6A TO-252, AUTOMOTIVE POWER Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-252 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2359 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6006PND3FRATL |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 4.31 EUR |
| 56+ | 3.12 EUR |
| R6006PND3FRATL |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2390 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 5.72 EUR |
| R6006PND3FRATL |
|
Hersteller: ROHM Semiconductor
MOSFETs TO252 600V 6A N-CH MOSFET
MOSFETs TO252 600V 6A N-CH MOSFET
auf Bestellung 3765 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.87 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 2.07 EUR |
| 2500+ | 1.95 EUR |
| R6006PND3FRATL |
|
Hersteller: Rohm Semiconductor
Description: 600V 6A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Qualification: AEC-Q101
Description: 600V 6A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2359 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.97 EUR |
| 10+ | 3.88 EUR |
| 50+ | 2.98 EUR |
| 100+ | 2.69 EUR |
| 500+ | 2.18 EUR |