R6009END3TL1 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 91+ | 1.93 EUR |
| 100+ | 1.81 EUR |
| 250+ | 1.7 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.54 EUR |
| 2500+ | 1.46 EUR |
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Produktbewertung abgeben
Technische Details R6009END3TL1 Rohm Semiconductor
Description: ROHM - R6009END3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 9 A, 0.5 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 94W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.5ohm, SVHC: Lead (17-Jan-2023).
Weitere Produktangebote R6009END3TL1 nach Preis ab 1.36 EUR bis 5.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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R6009END3TL1 | Rohm Semiconductor |
 Description: MOSFET N-CH 600V 9A TO252Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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R6009END3TL1 | Rohm Semiconductor |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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R6009END3TL1 | Rohm Semiconductor |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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R6009END3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO252 Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 5016 Stücke: Lieferzeit 10-14 Tag (e) |
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R6009END3TL1 | ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Low Noise |
auf Bestellung 2230 Stücke: Lieferzeit 10-14 Tag (e) |
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R6009END3TL1 | Rohm Semiconductor |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.15 EUR |
| R6009END3TL1 |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 51+ | 3.44 EUR |
| 63+ | 2.68 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.58 EUR |
| 2500+ | 1.36 EUR |
| R6009END3TL1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 51+ | 3.45 EUR |
| 63+ | 2.75 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.82 EUR |
| 1000+ | 1.73 EUR |
| 2500+ | 1.52 EUR |
| R6009END3TL1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5016 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.77 EUR |
| 10+ | 3.97 EUR |
| 100+ | 3.15 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.27 EUR |
| R6009END3TL1 |
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Hersteller: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Low Noise
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Low Noise
auf Bestellung 2230 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.82 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.24 EUR |
| R6009END3TL1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)