R6009KNJTL Rohm Semiconductor
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 81+ | 1.95 EUR |
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Technische Details R6009KNJTL Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V.
Weitere Produktangebote R6009KNJTL nach Preis ab 2.11 EUR bis 5.1 EUR
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R6009KNJTL | Hersteller : ROHM Semiconductor |
 MOSFET Nch 600V 9A Si MOSFET |
auf Bestellung 353 Stücke: Lieferzeit 14-28 Tag (e) |
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R6009KNJTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |
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R6009KNJTL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| R6009KNJTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Pulsed drain current: 27A Power dissipation: 94W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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R6009KNJTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
Produkt ist nicht verfügbar |
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| R6009KNJTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Pulsed drain current: 27A Power dissipation: 94W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |