R6009KNX Rohm Semiconductor
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 71+ | 2.21 EUR |
| 100+ | 2.03 EUR |
| 250+ | 1.88 EUR |
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Technische Details R6009KNX Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V.
Weitere Produktangebote R6009KNX nach Preis ab 1.42 EUR bis 3.5 EUR
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R6009KNX | Hersteller : ROHM Semiconductor |
 MOSFET Nch 600V 9A Si MOSFET |
auf Bestellung 488 Stücke: Lieferzeit 10-14 Tag (e) |
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R6009KNX | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
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