R6009KNXC7G Rohm Semiconductor
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 116+ | 1.35 EUR |
| 118+ | 1.28 EUR |
| 123+ | 1.18 EUR |
| 200+ | 1.12 EUR |
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Technische Details R6009KNXC7G Rohm Semiconductor
Description: 600V 9A TO-220FM, HIGH-SPEED SWI, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V.
Weitere Produktangebote R6009KNXC7G nach Preis ab 2.2 EUR bis 4.47 EUR
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R6009KNXC7G | Hersteller : ROHM Semiconductor |
 MOSFET 600V POWER MOSFET |
auf Bestellung 1738 Stücke: Lieferzeit 10-14 Tag (e) |
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R6009KNXC7G | Hersteller : Rohm Semiconductor |
Description: 600V 9A TO-220FM, HIGH-SPEED SWI Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
auf Bestellung 551 Stücke: Lieferzeit 10-14 Tag (e) |
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