R6011END3TL1 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 5.35 EUR |
| 10+ | 3.41 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.46 EUR |
| 1000+ | 2.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R6011END3TL1 ROHM Semiconductor
Description: MOSFET N-CH 600V 11A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Power Dissipation (Max): 124W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Weitere Produktangebote R6011END3TL1 nach Preis ab 3.87 EUR bis 5.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
R6011END3TL1 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 600V 11A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 371 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
|
|
R6011END3TL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||
| R6011END3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252 Mounting: SMD Gate charge: 32nC Polarisation: unipolar On-state resistance: 720mΩ Case: TO252 Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 22A Power dissipation: 124W Drain-source voltage: 600V Kind of channel: enhancement |
Produkt ist nicht verfügbar |