| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.86 EUR |
| 10+ | 3.14 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.83 EUR |
| 2500+ | 1.76 EUR |
| 5000+ | 1.7 EUR |
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Technische Details R6011KNX ROHM Semiconductor
Description: MOSFET N-CH 600V 11A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Power Dissipation (Max): 53W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V.
Weitere Produktangebote R6011KNX nach Preis ab 2.39 EUR bis 5.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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R6011KNX | Rohm Semiconductor |
 Description: MOSFET N-CH 600V 11A TO220FMPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
auf Bestellung 373 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6011KNX | ROHM - Japan |
MOSFET N-CH 600V 11A TO220FM TO-220-3 Full Pack R6011KNX Rohm Semiconductor TR6011knx Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
| R6011KNX |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.4 EUR |
| 10+ | 3.49 EUR |
| 100+ | 2.39 EUR |
| R6011KNX |
|
Hersteller: ROHM - Japan
MOSFET N-CH 600V 11A TO220FM TO-220-3 Full Pack R6011KNX Rohm Semiconductor TR6011knx
Anzahl je Verpackung: 2 Stücke
MOSFET N-CH 600V 11A TO220FM TO-220-3 Full Pack R6011KNX Rohm Semiconductor TR6011knx
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 5.88 EUR |