auf Bestellung 1935 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.90 EUR |
| 10+ | 5.46 EUR |
| 50+ | 2.85 EUR |
| 500+ | 2.64 EUR |
| 1000+ | 2.57 EUR |
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Technische Details R6011KNXC7G ROHM Semiconductor
Description: 600V 11A TO-220FM, HIGH-SPEED SW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Power Dissipation (Max): 53W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V.
Weitere Produktangebote R6011KNXC7G nach Preis ab 2.75 EUR bis 6.07 EUR
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R6011KNXC7G | Hersteller : Rohm Semiconductor |
 Description: 600V 11A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6011KNXC7G | Hersteller : ROHM SEMICONDUCTOR |
R6011KNXC7G THT N channel transistors |
Produkt ist nicht verfügbar |