R6011KNXC7G Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 69+ | 2.1 EUR |
| 100+ | 1.96 EUR |
| 250+ | 1.83 EUR |
| 500+ | 1.71 EUR |
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Technische Details R6011KNXC7G Rohm Semiconductor
Description: 600V 11A TO-220FM, HIGH-SPEED SW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Power Dissipation (Max): 53W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V.
Weitere Produktangebote R6011KNXC7G nach Preis ab 2.18 EUR bis 6.18 EUR
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R6011KNXC7G | Hersteller : ROHM Semiconductor |
 MOSFETs TO220 600V 11A N-CH MOSFET |
auf Bestellung 1933 Stücke: Lieferzeit 10-14 Tag (e) |
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R6011KNXC7G | Hersteller : Rohm Semiconductor |
Description: 600V 11A TO-220FM, HIGH-SPEED SW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) |
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R6011KNXC7G | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| R6011KNXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP Mounting: THT Gate charge: 22nC Polarisation: unipolar On-state resistance: 720mΩ Case: TO220FP Kind of package: tube Type of transistor: N-MOSFET Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 33A Power dissipation: 53W Drain-source voltage: 600V Kind of channel: enhancement |
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