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R6013VND3TL1

R6013VND3TL1 ROHM Semiconductor

datasheet?p=R6013VND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET 600V 13A TO-252 POWER MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.06 EUR
Mindestbestellmenge: 2500
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Technische Details R6013VND3TL1 ROHM Semiconductor

Description: 600V 13A TO-252, PRESTOMOS WITH, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V, Power Dissipation (Max): 131W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 500µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V.

Weitere Produktangebote R6013VND3TL1 nach Preis ab 1.48 EUR bis 4.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
R6013VND3TL1 R6013VND3TL1 Hersteller : Rohm Semiconductor datasheet?p=R6013VND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
auf Bestellung 2559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.75 EUR
10+ 4.26 EUR
25+ 4.02 EUR
100+ 3.42 EUR
250+ 3.21 EUR
500+ 2.81 EUR
1000+ 2.33 EUR
Mindestbestellmenge: 4
R6013VND3TL1 Hersteller : Rohm Semiconductor r6013vnd3tl1-e.pdf Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
84+1.87 EUR
88+ 1.72 EUR
100+ 1.48 EUR
Mindestbestellmenge: 84
R6013VND3TL1 R6013VND3TL1 Hersteller : Rohm Semiconductor datasheet?p=R6013VND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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