R6013VNXC7G Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 600V 8A TO-220FM, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.96 EUR |
| 10+ | 2.17 EUR |
| 50+ | 1.85 EUR |
| 100+ | 1.76 EUR |
| 250+ | 1.66 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.54 EUR |
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Technische Details R6013VNXC7G Rohm Semiconductor
Description: 600V 8A TO-220FM, PRESTOMOS WITH, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 500µA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V.
Weitere Produktangebote R6013VNXC7G nach Preis ab 2.64 EUR bis 3.91 EUR
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R6013VNXC7G | Hersteller : ROHM Semiconductor |
MOSFETs TO220 650V 39A N-CH MOSFET |
auf Bestellung 2024 Stücke: Lieferzeit 10-14 Tag (e) |
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