auf Bestellung 2024 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.3 EUR |
| 10+ | 4.66 EUR |
| 50+ | 3.94 EUR |
| 100+ | 3.59 EUR |
| 250+ | 3.4 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 2.73 EUR |
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Technische Details R6013VNXC7G ROHM Semiconductor
Description: 600V 8A TO-220FM, PRESTOMOS WITH, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 500µA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V.
Weitere Produktangebote R6013VNXC7G nach Preis ab 2.82 EUR bis 5.33 EUR
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R6013VNXC7G | Hersteller : Rohm Semiconductor |
 Description: 600V 8A TO-220FM, PRESTOMOS WITHPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 500µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
auf Bestellung 1080 Stücke: Lieferzeit 10-14 Tag (e) |
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