R6020JNZ4C13 ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFET R6020JNZ4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.
MOSFET R6020JNZ4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.
auf Bestellung 556 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 13.29 EUR |
10+ | 11.65 EUR |
25+ | 10.12 EUR |
100+ | 9.49 EUR |
250+ | 8.38 EUR |
600+ | 7.55 EUR |
1200+ | 7.18 EUR |
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Technische Details R6020JNZ4C13 ROHM Semiconductor
Description: MOSFET N-CH 600V 20A TO247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V, Power Dissipation (Max): 252W (Tc), Vgs(th) (Max) @ Id: 7V @ 3.5mA, Supplier Device Package: TO-247G, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote R6020JNZ4C13 nach Preis ab 9.69 EUR bis 13.57 EUR
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R6020JNZ4C13 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO247G Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Power Dissipation (Max): 252W (Tc) Vgs(th) (Max) @ Id: 7V @ 3.5mA Supplier Device Package: TO-247G Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 355 Stücke: Lieferzeit 10-14 Tag (e) |
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R6020JNZ4C13 | Hersteller : ROHM |
Description: ROHM - R6020JNZ4C13 - Leistungs-MOSFET, n-Kanal, 600 V, 20 A, 0.18 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V euEccn: NLR Verlustleistung: 76W Anzahl der Pins: 3Pins productTraceability: No Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.18ohm |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |