Technische Details R6030JNXC7G Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 7V @ 5.5mA, Power Dissipation (Max): 95W (Tc), Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote R6030JNXC7G nach Preis ab 6.45 EUR bis 16.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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R6030JNXC7G | Rohm Semiconductor |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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R6030JNXC7G | Rohm Semiconductor |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
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R6030JNXC7G | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 7V @ 5.5mA Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 1518 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6030JNXC7G |
![]() |
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FM Tube
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FM Tube
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 8.95 EUR |
| 25+ | 8.47 EUR |
| 50+ | 7.79 EUR |
| 100+ | 7.31 EUR |
| 250+ | 6.85 EUR |
| R6030JNXC7G |
![]() |
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FM Tube
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FM Tube
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.51 EUR |
| 21+ | 8.12 EUR |
| 50+ | 7 EUR |
| 100+ | 6.45 EUR |
| R6030JNXC7G |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.4 EUR |
| 10+ | 11.17 EUR |
| 50+ | 8.95 EUR |
| 100+ | 8.22 EUR |
| 500+ | 6.96 EUR |



