R6030JNXC7G Rohm Semiconductor
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 7.2 EUR |
| 25+ | 6.64 EUR |
| 50+ | 6.15 EUR |
| 100+ | 5.72 EUR |
| 250+ | 5.32 EUR |
| 500+ | 4.96 EUR |
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Technische Details R6030JNXC7G Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 7V @ 5.5mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V.
Weitere Produktangebote R6030JNXC7G nach Preis ab 6.95 EUR bis 12.53 EUR
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R6030JNXC7G | Hersteller : ROHM Semiconductor |
 MOSFET 600V Vdss; 95W Pd PrestoMOS; 30A |
auf Bestellung 862 Stücke: Lieferzeit 10-14 Tag (e) |
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R6030JNXC7G | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO220FM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
auf Bestellung 1617 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6030JNXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 95W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Power dissipation: 95W Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 143mΩ Gate-source voltage: ±30V Pulsed drain current: 90A Gate charge: 74nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| R6030JNXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 95W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Power dissipation: 95W Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 143mΩ Gate-source voltage: ±30V Pulsed drain current: 90A Gate charge: 74nC |
Produkt ist nicht verfügbar |