Produkte > ROHM SEMICONDUCTOR > R6030JNZ4C13
R6030JNZ4C13

R6030JNZ4C13 ROHM SEMICONDUCTOR


datasheet?p=R6030JNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 74nC
On-state resistance: 143mΩ
Drain current: 30A
Gate-source voltage: ±30V
Pulsed drain current: 90A
Power dissipation: 370W
Drain-source voltage: 600V
Polarisation: unipolar
auf Bestellung 525 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.17 EUR
11+6.99 EUR
30+5.55 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details R6030JNZ4C13 ROHM SEMICONDUCTOR

Description: MOSFET N-CH 600V 30A TO247G, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247G, Vgs(th) (Max) @ Id: 7V @ 5.5mA, Power Dissipation (Max): 370W (Tc), Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: TO-247-3, Packaging: Tube, Mounting Type: Through Hole.

Weitere Produktangebote R6030JNZ4C13 nach Preis ab 8.17 EUR bis 16.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
R6030JNZ4C13 R6030JNZ4C13 Hersteller : ROHM Semiconductor datasheet?p=R6030JNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Transistor MOSFET, Nch 600V 30A 3rd Gen, Fast Recover
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.02 EUR
10+8.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
R6030JNZ4C13 R6030JNZ4C13 Hersteller : Rohm Semiconductor datasheet?p=R6030JNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO247G
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247G
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Mounting Type: Through Hole
auf Bestellung 383 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.65 EUR
30+9.93 EUR
120+8.45 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH