auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.51 EUR |
| 10+ | 14.91 EUR |
| 100+ | 12.36 EUR |
| 600+ | 10.75 EUR |
| 1200+ | 9.36 EUR |
| 3000+ | 9.01 EUR |
| 5400+ | 8.61 EUR |
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Technische Details R6035KNZ4C13 ROHM Semiconductor
Description: MOSFET N-CH 600V 35A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V, Power Dissipation (Max): 379W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote R6035KNZ4C13 nach Preis ab 10.76 EUR bis 16.51 EUR
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| R6035KNZ4C13 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 600V 35A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V Power Dissipation (Max): 379W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6035KNZ4C13 | Hersteller : ROHM SEMICONDUCTOR |
R6035KNZ4C13 THT N channel transistors |
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