R6046ANZ1C9 Rohm Semiconductor
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 9.74 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R6046ANZ1C9 Rohm Semiconductor
Description: MOSFET N-CH 600V 46A TO247, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Weitere Produktangebote R6046ANZ1C9 nach Preis ab 25.35 EUR bis 26.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
R6046ANZ1C9 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 600V 46A TO247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
R6046ANZ1C9 | Hersteller : ROHM Semiconductor |
MOSFET 10V Drive Nch MOSFET |
Produkt ist nicht verfügbar |