Technische Details R6047ENZ4C13 ROHM Semiconductor
Description: MOSFET N-CH 600V 47A TO247, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 481W (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote R6047ENZ4C13 nach Preis ab 23.54 EUR bis 25.63 EUR
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R6047ENZ4C13 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 600V 47A TO247Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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