R6061YNXC7G Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: NCH 600V 26A, TO-220FM, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.27 EUR |
| 10+ | 5.46 EUR |
| 50+ | 4.27 EUR |
| 100+ | 3.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R6061YNXC7G Rohm Semiconductor
Description: NCH 600V 26A, TO-220FM, POWER MO, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 12V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 6V @ 3.5mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V.
Weitere Produktangebote R6061YNXC7G nach Preis ab 8.18 EUR bis 14.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
R6061YNXC7G | Hersteller : ROHM Semiconductor |
MOSFET Nch 600V 26A, TO-220FM, Power MOSFET: R6061YNX is a power MOSFET with Low on - resistance, suitable for switching. |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|