R6076ENZ1C9 Rohm Semiconductor
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| Anzahl | Preis |
|---|---|
| 13+ | 11.96 EUR |
| 25+ | 11.00 EUR |
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Technische Details R6076ENZ1C9 Rohm Semiconductor
Description: MOSFET N-CH 600V 76A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V.
Weitere Produktangebote R6076ENZ1C9
| Foto | Bezeichnung | Hersteller | Beschreibung |
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R6076ENZ1C9 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 600V 76A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V |
Produkt ist nicht verfügbar |
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| R6076ENZ1C9 | Hersteller : ROHM Semiconductor |
MOSFET 10V Drive Nch MOSFET |
Produkt ist nicht verfügbar |