R6076ENZ4C13 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 10+ | 17.83 EUR |
| 50+ | 15.45 EUR |
| 100+ | 13.84 EUR |
| 200+ | 13.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R6076ENZ4C13 Rohm Semiconductor
Description: MOSFET N-CH 600V 76A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V, Power Dissipation (Max): 735W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V.
Weitere Produktangebote R6076ENZ4C13 nach Preis ab 20.23 EUR bis 31.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
R6076ENZ4C13 | Rohm Semiconductor |
 Trans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
R6076ENZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 76A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V Power Dissipation (Max): 735W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V |
auf Bestellung 463 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
R6076ENZ4C13 | ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 600V 76A 3rd Gen, Low Noise |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6076ENZ4C13 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 20.23 EUR |
| R6076ENZ4C13 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Description: MOSFET N-CH 600V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
auf Bestellung 463 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.06 EUR |
| 30+ | 23.74 EUR |
| R6076ENZ4C13 |
|
Hersteller: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 600V 76A 3rd Gen, Low Noise
MOSFETs Transistor MOSFET, Nch 600V 76A 3rd Gen, Low Noise
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 31.89 EUR |
| 10+ | 31.14 EUR |
| 25+ | 24.67 EUR |