R6502END3TL1 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 94+ | 1.86 EUR |
| 111+ | 1.56 EUR |
| 121+ | 1.39 EUR |
| 200+ | 1.3 EUR |
| 500+ | 1.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R6502END3TL1 Rohm Semiconductor
Description: 650V 1.7A TO-252, LOW-NOISE POWE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 600mA, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 4V @ 40µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V.
Weitere Produktangebote R6502END3TL1 nach Preis ab 0.84 EUR bis 3.06 EUR
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R6502END3TL1 | Rohm Semiconductor |
 Description: 650V 1.7A TO-252, LOW-NOISE POWEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 600mA, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 40µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
auf Bestellung 2496 Stücke: Lieferzeit 10-14 Tag (e) |
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R6502END3TL1 | ROHM Semiconductor |
MOSFETs 650V 1.7A TO-252, Low-noise Power MOSFET |
auf Bestellung 3477 Stücke: Lieferzeit 10-14 Tag (e) |
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R6502END3TL1 | Rohm Semiconductor |
Trans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| R6502END3TL1 |
|
Hersteller: Rohm Semiconductor
Description: 650V 1.7A TO-252, LOW-NOISE POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 600mA, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Description: 650V 1.7A TO-252, LOW-NOISE POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 600mA, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.53 EUR |
| 12+ | 1.76 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.99 EUR |
| R6502END3TL1 |
|
Hersteller: ROHM Semiconductor
MOSFETs 650V 1.7A TO-252, Low-noise Power MOSFET
MOSFETs 650V 1.7A TO-252, Low-noise Power MOSFET
auf Bestellung 3477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.93 EUR |
| 2500+ | 0.86 EUR |
| 5000+ | 0.84 EUR |
| R6502END3TL1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)