Produkte > ROHM SEMICONDUCTOR > R6502END3TL1
R6502END3TL1

R6502END3TL1 Rohm Semiconductor

r6502end3tl1-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
94+1.58 EUR
111+1.30 EUR
121+1.14 EUR
200+1.04 EUR
500+0.85 EUR
Mindestbestellmenge: 94
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details R6502END3TL1 Rohm Semiconductor

Description: 650V 1.7A TO-252, LOW-NOISE POWE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 600mA, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 4V @ 40µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V.

Weitere Produktangebote R6502END3TL1 nach Preis ab 0.72 EUR bis 2.13 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
R6502END3TL1 R6502END3TL1 Hersteller : ROHM Semiconductor datasheet?p=R6502END3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key MOSFETs 650V 1.7A TO-252, Low-noise Power MOSFET
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.81 EUR
10+1.49 EUR
100+1.16 EUR
500+0.98 EUR
1000+0.80 EUR
2500+0.75 EUR
5000+0.72 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
R6502END3TL1 R6502END3TL1 Hersteller : Rohm Semiconductor datasheet?p=R6502END3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 650V 1.7A TO-252, LOW-NOISE POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 600mA, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
12+1.48 EUR
100+1.15 EUR
500+0.90 EUR
1000+0.83 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
R6502END3TL1 R6502END3TL1 Hersteller : Rohm Semiconductor r6502end3tl1-e.pdf Trans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
R6502END3TL1 R6502END3TL1 Hersteller : Rohm Semiconductor datasheet?p=R6502END3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 650V 1.7A TO-252, LOW-NOISE POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 600mA, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH