R6504END3TL1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 650V 4A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 1497 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.68 EUR |
| 10+ | 2.19 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.18 EUR |
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Technische Details R6504END3TL1 Rohm Semiconductor
Description: 650V 4A TO-252, LOW-NOISE POWER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 4V @ 130µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V.
Weitere Produktangebote R6504END3TL1 nach Preis ab 1.06 EUR bis 2.69 EUR
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R6504END3TL1 | Hersteller : ROHM Semiconductor |
MOSFET 650V 4A TO-252, Low-noise Power MOSFET |
auf Bestellung 1460 Stücke: Lieferzeit 10-14 Tag (e) |
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R6504END3TL1 | Hersteller : ROHM |
Description: ROHM - R6504END3TL1 - Leistungs-MOSFET, n-Kanal, 650 V, 4 A, 0.955 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 58W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.955ohm |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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R6504END3TL1 | Hersteller : ROHM |
Description: ROHM - R6504END3TL1 - Leistungs-MOSFET, n-Kanal, 650 V, 4 A, 0.955 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 58W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 58W Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) productTraceability: No Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.955ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.955ohm |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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| R6504END3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 58W Gate charge: 15nC Polarisation: unipolar Drain current: 4A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.02Ω Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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R6504END3TL1 | Hersteller : Rohm Semiconductor |
Description: 650V 4A TO-252, LOW-NOISE POWER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
Produkt ist nicht verfügbar |
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| R6504END3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 58W Gate charge: 15nC Polarisation: unipolar Drain current: 4A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.02Ω |
Produkt ist nicht verfügbar |