R6507ENXC7G Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 85+ | 2.12 EUR |
| 106+ | 1.67 EUR |
| 122+ | 1.42 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
85 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details R6507ENXC7G Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V.
Weitere Produktangebote R6507ENXC7G nach Preis ab 1.3 EUR bis 3.8 EUR
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R6507ENXC7G | Rohm Semiconductor |
 Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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R6507ENXC7G | Rohm Semiconductor |
Description: 650V 7A TO-220FM, LOW-NOISE POWE Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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R6507ENXC7G | ROHM Semiconductor |
MOSFETs TO220 650V 7A N-CH MOSFET |
auf Bestellung 1972 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6507ENXC7G |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FM Tube
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FM Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 2.21 EUR |
| 100+ | 2.08 EUR |
| 250+ | 1.96 EUR |
| 500+ | 1.84 EUR |
| 1000+ | 1.76 EUR |
| R6507ENXC7G |
|
Hersteller: Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.44 EUR |
| 50+ | 2.19 EUR |
| 100+ | 1.3 EUR |
| R6507ENXC7G |
|
Hersteller: ROHM Semiconductor
MOSFETs TO220 650V 7A N-CH MOSFET
MOSFETs TO220 650V 7A N-CH MOSFET
auf Bestellung 1972 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.8 EUR |
| 10+ | 2.31 EUR |