R6507ENXC7G Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 85+ | 2.07 EUR |
| 106+ | 1.63 EUR |
| 122+ | 1.38 EUR |
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Technische Details R6507ENXC7G Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 4V @ 200µA, Power Dissipation (Max): 46W (Tc), Packaging: Tube, Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack.
Weitere Produktangebote R6507ENXC7G nach Preis ab 1.3 EUR bis 3.53 EUR
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R6507ENXC7G | Rohm Semiconductor |
 Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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R6507ENXC7G | Rohm Semiconductor |
Description: 650V 7A TO-220FM, LOW-NOISE POWE Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 46W (Tc) Packaging: Tube Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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R6507ENXC7G | ROHM Semiconductor |
MOSFETs TO220 650V 7A N-CH MOSFET |
auf Bestellung 1972 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6507ENXC7G |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FM Tube
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FM Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 2.17 EUR |
| 100+ | 2.03 EUR |
| 250+ | 1.92 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.71 EUR |
| R6507ENXC7G |
|
Hersteller: Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 46W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 46W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.44 EUR |
| 50+ | 2.19 EUR |
| 100+ | 1.3 EUR |
| R6507ENXC7G |
|
Hersteller: ROHM Semiconductor
MOSFETs TO220 650V 7A N-CH MOSFET
MOSFETs TO220 650V 7A N-CH MOSFET
auf Bestellung 1972 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.53 EUR |
| 10+ | 2.28 EUR |