R6507KNJTL ROHM
Hersteller: ROHM
Description: ROHM - R6507KNJTL - Leistungs-MOSFET, n-Kanal, 650 V, 7 A, 0.605 ohm, TO-263S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 78W
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: TO-263S
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.605ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.605ohm
SVHC: Lead (17-Jan-2023)
| Anzahl | Privatkunde |
|---|---|
| 62+ | 4.05 EUR |
| 71+ | 3.3 EUR |
| 86+ | 2.51 EUR |
| 100+ | 2.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R6507KNJTL ROHM
Description: ROHM - R6507KNJTL - Leistungs-MOSFET, n-Kanal, 650 V, 7 A, 0.605 ohm, TO-263S, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 78W, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 78W, Bauform - Transistor: TO-263S, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.605ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.605ohm, SVHC: Lead (17-Jan-2023).
Weitere Produktangebote R6507KNJTL nach Preis ab 5.44 EUR bis 8.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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R6507KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 7A LPTS Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Supplier Device Package: LPTS Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 5V @ 200µA Power Dissipation (Max): 78W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6507KNJTL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Supplier Device Package: LPTS
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 650V 7A LPTS
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Supplier Device Package: LPTS
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 5V @ 200µA
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.27 EUR |
| 10+ | 5.44 EUR |