R6509ENXC7G Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 112+ | 1.59 EUR |
| 148+ | 1.19 EUR |
| 165+ | 1.05 EUR |
| 200+ | 0.99 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
112 Stücke
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Produktbewertung abgeben
Technische Details R6509ENXC7G Rohm Semiconductor
Description: 650V 9A TO-220FM, LOW-NOISE POWE, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 230µA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V.
Weitere Produktangebote R6509ENXC7G nach Preis ab 2.23 EUR bis 6.2 EUR
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R6509ENXC7G | Rohm Semiconductor |
 Description: 650V 9A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
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R6509ENXC7G | ROHM Semiconductor |
MOSFETs TO220 650V 9A N-CH MOSFET |
auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6509ENXC7G |
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Hersteller: Rohm Semiconductor
Description: 650V 9A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: 650V 9A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.8 EUR |
| 50+ | 2.33 EUR |
| 100+ | 2.31 EUR |
| 500+ | 2.23 EUR |
| R6509ENXC7G |
|
Hersteller: ROHM Semiconductor
MOSFETs TO220 650V 9A N-CH MOSFET
MOSFETs TO220 650V 9A N-CH MOSFET
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.2 EUR |
| 10+ | 3.5 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.43 EUR |