R6509ENXC7G Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 112+ | 1.56 EUR |
| 148+ | 1.17 EUR |
| 165+ | 1.02 EUR |
| 200+ | 0.96 EUR |
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Technische Details R6509ENXC7G Rohm Semiconductor
Description: 650V 9A TO-220FM, LOW-NOISE POWE, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 4V @ 230µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote R6509ENXC7G nach Preis ab 2.2 EUR bis 3.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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R6509ENXC7G | ROHM Semiconductor |
 MOSFETs TO220 650V 9A N-CH MOSFET |
auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
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R6509ENXC7G | Rohm Semiconductor |
Description: 650V 9A TO-220FM, LOW-NOISE POWE Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 4V @ 230µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6509ENXC7G |
|
Hersteller: ROHM Semiconductor
MOSFETs TO220 650V 9A N-CH MOSFET
MOSFETs TO220 650V 9A N-CH MOSFET
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.69 EUR |
| 10+ | 2.2 EUR |
| R6509ENXC7G |
|
Hersteller: Rohm Semiconductor
Description: 650V 9A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: 650V 9A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.8 EUR |
| 50+ | 2.33 EUR |
| 100+ | 2.31 EUR |
| 500+ | 2.23 EUR |