R6509KNXC7G Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 650V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 230µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 3838 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.33 EUR |
| 50+ | 2.18 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.68 EUR |
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Technische Details R6509KNXC7G Rohm Semiconductor
Description: 650V 9A TO-220FM, HIGH-SPEED SWI, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 5V @ 230µA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V.
Weitere Produktangebote R6509KNXC7G nach Preis ab 1.85 EUR bis 4.38 EUR
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R6509KNXC7G | Hersteller : ROHM Semiconductor |
MOSFETs TO220 650V 9A N-CH MOSFET |
auf Bestellung 3941 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6509KNXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP Kind of package: tube Case: TO220FP Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.5nC On-state resistance: 1.1Ω Power dissipation: 48W Drain current: 9A Pulsed drain current: 27A Drain-source voltage: 650V |
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