R6515KNX3C16 ROHM Semiconductor
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.84 EUR |
| 10+ | 5.26 EUR |
| 100+ | 4.28 EUR |
| 500+ | 3.66 EUR |
| 1000+ | 2.92 EUR |
| 5000+ | 2.82 EUR |
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Technische Details R6515KNX3C16 ROHM Semiconductor
Description: 650V 15A, TO-220AB, HIGH-SPEED S, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V, Power Dissipation (Max): 161W (Tc), Vgs(th) (Max) @ Id: 5V @ 430µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Weitere Produktangebote R6515KNX3C16 nach Preis ab 3.89 EUR bis 6.21 EUR
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R6515KNX3C16 | Hersteller : Rohm Semiconductor |
 Description: 650V 15A, TO-220AB, HIGH-SPEED SPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 161W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 956 Stücke: Lieferzeit 10-14 Tag (e) |
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