R6530KNZC17 ROHM Semiconductor

Description: MOSFET N-CH 650V 30A TO3, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 5V @ 960µA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V.