R6547ENZ4C13 Rohm Semiconductor
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 8.71 EUR |
| 50+ | 7.16 EUR |
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Technische Details R6547ENZ4C13 Rohm Semiconductor
Description: 650V 47A TO-247, LOW-NOISE POWER, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.72mA, Supplier Device Package: TO-247G, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V.
Weitere Produktangebote R6547ENZ4C13 nach Preis ab 8.18 EUR bis 15.91 EUR
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R6547ENZ4C13 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247G Tube |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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R6547ENZ4C13 | Hersteller : ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 650V 47A 3rd Gen, Low Noise |
auf Bestellung 514 Stücke: Lieferzeit 10-14 Tag (e) |
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R6547ENZ4C13 | Hersteller : Rohm Semiconductor |
Description: 650V 47A TO-247, LOW-NOISE POWER Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.72mA Supplier Device Package: TO-247G Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V |
auf Bestellung 324 Stücke: Lieferzeit 10-14 Tag (e) |
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