R6547ENZ4C13 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 16+ | 10.96 EUR |
| 50+ | 9.16 EUR |
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Technische Details R6547ENZ4C13 Rohm Semiconductor
Description: 650V 47A TO-247, LOW-NOISE POWER, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.72mA, Supplier Device Package: TO-247G, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V.
Weitere Produktangebote R6547ENZ4C13 nach Preis ab 9.73 EUR bis 18.93 EUR
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R6547ENZ4C13 | Rohm Semiconductor |
 Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247G Tube |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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R6547ENZ4C13 | ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 650V 47A 3rd Gen, Low Noise |
auf Bestellung 514 Stücke: Lieferzeit 10-14 Tag (e) |
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R6547ENZ4C13 | Rohm Semiconductor |
Description: 650V 47A TO-247, LOW-NOISE POWER Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.72mA Supplier Device Package: TO-247G Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V |
auf Bestellung 324 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6547ENZ4C13 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247G Tube
Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247G Tube
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 13.45 EUR |
| R6547ENZ4C13 |
|
Hersteller: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 650V 47A 3rd Gen, Low Noise
MOSFETs Transistor MOSFET, Nch 650V 47A 3rd Gen, Low Noise
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.06 EUR |
| 25+ | 10.31 EUR |
| 100+ | 9.82 EUR |
| 250+ | 9.81 EUR |
| R6547ENZ4C13 |
|
Hersteller: Rohm Semiconductor
Description: 650V 47A TO-247, LOW-NOISE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.72mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Description: 650V 47A TO-247, LOW-NOISE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.72mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
auf Bestellung 324 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.93 EUR |
| 30+ | 11.06 EUR |
| 120+ | 9.73 EUR |