R6576ENZ4C13 Rohm Semiconductor

Description: 650V 76A TO-247, LOW-NOISE POWER, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 2.96mA, Power Dissipation (Max): 735W (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 76A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Drain to Source Voltage (Vdss): 650 V.