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R8001CND3FRATL Rohm Semiconductor


r8001cnd3fratl-e.pdf
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2370 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
75+2.33 EUR
100+2.2 EUR
250+2.06 EUR
500+1.94 EUR
1000+1.86 EUR
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Technische Details R8001CND3FRATL Rohm Semiconductor

Description: MOSFET N-CH 800V 1A TO252, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 5.5V @ 1mA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.

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R8001CND3FRATL R8001CND3FRATL Rohm Semiconductor datasheet?p=R8001CND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 1A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.34 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
R8001CND3FRATL R8001CND3FRATL Rohm Semiconductor r8001cnd3fratl-e.pdf Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
45+4.3 EUR
Mindestbestellmenge: 45 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
R8001CND3FRATL R8001CND3FRATL Rohm Semiconductor datasheet?p=R8001CND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 1A TO252
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2574 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.11 EUR
10+4.59 EUR
100+3.69 EUR
500+3.03 EUR
1000+2.51 EUR
Mindestbestellmenge: 5 Stücke
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R8001CND3FRATL R8001CND3FRATL ROHM Semiconductor datasheet?p=R8001CND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect
auf Bestellung 3126 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.12 EUR
10+3.96 EUR
100+2.76 EUR
500+2.24 EUR
1000+2.18 EUR
2500+2.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
R8001CND3FRATL datasheet?p=R8001CND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 1A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.34 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
R8001CND3FRATL r8001cnd3fratl-e.pdf
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
45+4.3 EUR
Mindestbestellmenge: 45 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
R8001CND3FRATL datasheet?p=R8001CND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 1A TO252
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2574 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.11 EUR
10+4.59 EUR
100+3.69 EUR
500+3.03 EUR
1000+2.51 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
R8001CND3FRATL datasheet?p=R8001CND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect
auf Bestellung 3126 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.12 EUR
10+3.96 EUR
100+2.76 EUR
500+2.24 EUR
1000+2.18 EUR
2500+2.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH