R8001CND3FRATL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 75+ | 2.33 EUR |
| 100+ | 2.2 EUR |
| 250+ | 2.06 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.86 EUR |
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Technische Details R8001CND3FRATL Rohm Semiconductor
Description: MOSFET N-CH 800V 1A TO252, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 5.5V @ 1mA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.
Weitere Produktangebote R8001CND3FRATL nach Preis ab 2.05 EUR bis 6.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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R8001CND3FRATL | Rohm Semiconductor |
Description: MOSFET N-CH 800V 1A TO252Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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R8001CND3FRATL | Rohm Semiconductor |
Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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R8001CND3FRATL | Rohm Semiconductor |
Description: MOSFET N-CH 800V 1A TO252Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 2574 Stücke: Lieferzeit 10-14 Tag (e) |
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R8001CND3FRATL | ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect |
auf Bestellung 3126 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R8001CND3FRATL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 1A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: MOSFET N-CH 800V 1A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.34 EUR |
| R8001CND3FRATL |
![]() |
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 4.3 EUR |
| R8001CND3FRATL |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 1A TO252
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 800V 1A TO252
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2574 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.11 EUR |
| 10+ | 4.59 EUR |
| 100+ | 3.69 EUR |
| 500+ | 3.03 EUR |
| 1000+ | 2.51 EUR |
| R8001CND3FRATL |
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Hersteller: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect
auf Bestellung 3126 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.12 EUR |
| 10+ | 3.96 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.24 EUR |
| 1000+ | 2.18 EUR |
| 2500+ | 2.05 EUR |



