R8001CND3FRATL Rohm Semiconductor
auf Bestellung 2370 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 75+ | 1.94 EUR |
| 100+ | 1.79 EUR |
| 250+ | 1.65 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R8001CND3FRATL Rohm Semiconductor
Description: MOSFET N-CH 800V 1A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Weitere Produktangebote R8001CND3FRATL nach Preis ab 1.71 EUR bis 4.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
R8001CND3FRATL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 800V 1A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
R8001CND3FRATL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
R8001CND3FRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 800V 1A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 2574 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
R8001CND3FRATL | Hersteller : ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect |
auf Bestellung 3243 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| R8001CND3FRATL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 4A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Pulsed drain current: 4A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 8.7Ω Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
| R8001CND3FRATL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 4A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Pulsed drain current: 4A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 8.7Ω Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |